A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices
نویسندگان
چکیده
In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with MEDICI simulation results verifies the model.
منابع مشابه
A Model for the Drain Current of Deep Submicrometer MOSFET's Including Electron-Velocity Overshoot - Electron Devices, IEEE Transactions on
We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET’s down to 0.07 m channel lengths both at low and room temperatures.
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