A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

نویسندگان

  • Wensheng Qian
  • Xing Zhou
  • Yuwen Wang
  • Khee Yong Lim
چکیده

In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with MEDICI simulation results verifies the model.

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تاریخ انتشار 2000